Characterization of AlN thin film piezoelectric coefficient d31 using Piezoelectric Micromachined Ultrasonic Transducers (PMUTs)

نویسندگان

چکیده

Abstract The transverse piezoelectric coefficients d 31 of membranes is fundamental to the design, simulation, optimization, and applications devices using Aluminum Nitride (AlN). In this work, a method based on inverse effect proposed characterize . Based equation thin film vibration equation, central displacement Piezoelectric Micromachined Ultrasonic Transducers (PMUTs) linearly related DC voltages when PMUTs are in linear operating region. measured by 3D Measuring Laser Microscope at various voltages. finite element (FEM) combined with change approximate relationship between voltage. Then, verified for its accuracy through use cantilever technique where fabricated same wafer as above PMUTs. AlN obtained -1.58pC/N -1.60pC/N. error two methods within 2%. Ultimately, extraction measurement can be achieved method.

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ژورنال

عنوان ژورنال: Journal of physics

سال: 2023

ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']

DOI: https://doi.org/10.1088/1742-6596/2483/1/012067